Power MOSFETs manage low power applications

INTERNATIONAL RECTIFIER PQFN 2mm x 2mm and PQFN 3.3mm x3.3 mm low power MOSFET packages integrate two HEXFET MOSFETs utilizing firm’s latest silicon technology to deliver a high density, cost effective solution for low power applications. A pair of power MOSFETs are in each package, as devices offer the flexibility of either common drain or half-bridge topologies. Devices deliver ultra-low losses, such as IRLHS6276, which provides two MOSFETS each with a typical on-state resistance (RDS(on)) of 33 milliohms in only a 4 mm2 area.

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