Electronic Products & Technology

Power MOSFET lowers on-resistance to 16m

EP&T Magazine   


VISHAY Model SiA427DJ 8 V p-channel TrenchFET power MOSFET provides low on-resistance in a thermally enhanced PowerPAK SC-70 2 mm by 2 mm footprint area. Device provides an ultra-low on-resistance of 16mΩ at 4.5V, 26mΩ at 1.8V, 32mΩ at 1.5V and 95mΩ at 1.2V. Device can handle 40 % more power dissipation under the same ambient conditions, compared with a typical device in the standard SC-70 package.



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