Next-gen 1200V SiC enhances efficiency of EVs
Stephen LawElectronics Semiconductors carbide electric EVs MOSFETs semiconductors semis SiC silicon vehicles
ONSEMI EliteSiC next generation 1200V silicon carbide (SiC) M3S devices enable power electronics designers to achieve best-in-class efficiency and lower system cost. Product portfolio includes EliteSiC MOSFETs and modules that facilitate higher switching speeds to support the growing number of 800V electric vehicle (EV) on-board charger (OBC) and energy infrastructure applications.
Also part of the portfolio, are EliteSiC M3S devices in half-bridge power integrated modules (PIMs) with industry leading lowest Rds(on) in a standard F2 package. Targeting industrial applications, the modules are suitable for dc-ac, ac-dc and dc-dc high power conversion stages. Devices provide higher levels of integration with optimized direct bonded copper designs to enable balanced current sharing and thermal distribution between parallel switches. PIMs are designed to deliver high power density in energy infrastructure, EV DC fast charging and uninterruptible power supplies (UPS).