MOSFETs protect smartphone battery circuit modules

MAGNACHIP SEMICONDUCTOR Two seventh-generation MXT Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), built on its Super-Short Channel technology, for the battery protection circuit modules in smartphones. Device shortens the channel length between the source and the drain to significantly reduce R_DS(on) and conduction losses during on-state operation. Firm is applying this technology first to the 12V MOSFET (MDWC12D028ERH) and 24V MOSFET (MDWC24D031ERH). This technology has reduced the sizes of the MOSFETs by 20%, while the R_DS(on) of MDWC12D028ERH and MDWC24D031ERH is lowered by 40% and 24%, respectively, compared to the previous versions. Device features reduced power loss when a battery is charging or discharging and a low operating temperature can be maintained for fast battery charging.

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