MOSFET delivers low RDS(ON)*Qg FOM of 2.8 Ω*nC

VISHAY INTERTECHNOLOGY SiHK045N60E  600 V E power MOSFET provides high efficiency for telecom, server, and datacenter power supply applications. The Vishay Siliconix n-channel  slashes on-resistance by 27% compared with previous-generation devices, while delivering 60% lower gate charge. This results in very low gate charge times on-resistance for devices in the same class, a key figure of merit (FOM) for 600V MOSFETs used in power conversion applications. Device features low typical on-resistance of 0.043 Ω at 10 V and ultra-low gate charge down to 65 nC. The product’s FOM of 2.8Ω*nC is 3.4% lower than the closest competing MOSFET in the same class.

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