Low-side GAN FET driver delivers programmable source current, adjustable overcurrent protection
GAN SYSTEMS RAA226110 low-side driver designed to drive enhancement-mode Gallium Nitride (GaN) FETs in isolated and non-isolated topologies. Device operates with a supply voltage from 6.5V to 18V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. Product provides 5.8V gate drive voltage (VDRV) generated by an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement-mode GaN FETs. The gate drive voltage features an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL connected to VEEL to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold.