IR 600V IGBTs boost power density, increase efficiency
INTERNATIONAL RECTIFIER Latest generation Gen7 F family of 600V insulated-gate bipolar transistors (IGBTs) are optimized for motor drive applications operating below 10kHz. Devices employ punch-through Trench technology to deliver higher power density and the ability to optimize conduction and switching losses for a specific frequency of operation. Devices achieve very low VCE(ON) to improve efficiency with zero temperature coefficient for high efficiency across the entire operating range. Products provide smoother switching to reduce EMI and overshoots, and are short-circuit rated for motor drive applications.