Improved epitaxial processes reduce droop in LED

OSRAM Luminous efficacy of firm’s high-power LEDs has been improved by reducing the unwanted droop effect at high currents. This development was made possible by optimized epitaxial growth processes. At a current density of 3 A/mm², the quantum efficiency of the LEDs is now a full 7.5 percent above the previous level. The unwanted drop in efficiency as the current density increases, commonly referred to as ‘droop’, limits the maximum luminous efficacy of indium gallium nitride based light emitting diodes (LEDs). http://www.osram.com