High-voltage power MOSFET reduces losses to 52%
RENESAS RJK60S5DPK high-voltage N-channel power metal-oxide-semiconductor field-effect-transistor (MOSFET) for power supply units, delivers high efficiency. Device is ideal for use in the primary power switching circuit of a power supply unit, which converts alternating current (ac) to direct current (dc). Product employs a high-precision super junction structure to achieve a figure of merit (FOM), a key overall performance index for power MOSFET devices, which is approximately 90% improved from firm’s existing products.
Print this page