High-temperature infrared emitter delivers narrow angle of emission
Stephen LawElectronics Wireless aluminum aluminum arsenide arsenide emitter emitter gallium gallium IR IR IRLED IRLED
OPTO DIODE OD-110LISOLHT high-power, gallium aluminum arsenide (GaAlAs) infrared light-emitting diode (IRLED) illuminator comes with a narrow angle of emission and a wide temperature rating. The IR emitter is suitable for applications in industrial and defense/military tasks, such as exterior covert lighting on aircraft. Device’s total power output ranges from 50mW (minimum) to 100mW (typical), and provides a storage and operating temperature of -65 °C to +150 °C. Peak emission wavelength is 880nm with a spectral bandwidth of 55nm (typical). The half intensity beam angle is 7 degrees (typical). The forward voltage is from 1.75 volts (typical) to 2 volts (maximum) with reverse breakdown voltage ranging from 5 volts (minimum) to 30 volts (typical). Other features include rise and fall times of 20 nanoseconds, respectively.
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