High-speed, high-capacity power amplifier serves next gen networks

NEC CORP. D band power amplifier serves as a key device for mobile access and fronthaul/backhaul wireless communication equipment to enable high-speed, high-capacity communications for 5G Advanced and 6G networks. Device uses GaAs technology that can be mass-produced and has achieved high output power of 10mW in the 150GHz band. Capitalizing on this, NEC aims to fast-track both equipment development and social implementation. Device uses a commercially available 0.1-m gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. Compared to CMOS and silicon germanium (SiGe) used for the sub-terahertz band, GaAs pHEMTs have high operation voltage and lower initial costs for mass production.

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