High-power GaAlAs IRLED illuminator is robust
Stephen LawElectronics Optoelectronics IRLED LED opto optoelectronics
OPTO DIODE OD-669 infrared light-emitting diode (IRLED) comes in a convenient TO-66 package for heatsink attach. The high-power gallium aluminum arsenide (GaAlAs) IRLED illuminator features a peak emission of 880nm with an extremely wide angle of emission. Designed with nine chips connected in series, the robust device is housed in an electrically-isolated case, making it suitable for covert aircraft lighting or covert anti-collision lighting in aviation applications. Total power output ranges from 390mW (minimum) to 500mW (typical) under test conditions at 300mA. The spectral bandwidth at 50% is 80nm and the half intensity beam angle is typically 120 degrees.