Half-bridge GaN ICs boost MHz performance, reduce footprint

NAVITAS SEMICONDUCTOR GaNSense half-bridge power ICs enable a new level of MHz switching frequencies, while reducing the system cost and complexity compared to existing discrete solutions. ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation, to create a fundamental power-stage building block for power electronics. The single-package solution reduces component count and footprint by more than 60% compared to existing discretes, which cuts system cost, size, weight, and complexity. The integrated GaNSense technology enables autonomous protection for increased reliability and robustness, combined with loss-less current sensing for higher levels of efficiency and energy savings. The high integration levels also eliminate circuit parasitics and delays, making MHz-frequency operation a reality for a broad range of ac-dc-power topologies.

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