NITRONEX NRF2 series 48V GaN-on-Si process platform for RF solutions delivers double the power density, 1-2dB higher gain, improved broadband performance, higher breakdown voltage and higher supply voltage operation. Device increases reliability for GaN-on-Si, with more than one million hours (114 years) mean time to failure (MTTF) at an operating junction temperature of 230C using a stringent 10% drift failure criteria.
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