GaN ICs deliver best-in-class robustness, ease of use

CAMBRIDGE GAN DEVICES H2 Series ICeGaN 650V gallium nitride HEMT family delivers industry-leading robustness, ease-of-use and maximized efficiency. HEMTs employ firm’s smart gate interface that eliminates typical e-mode GaN weaknesses, delivering improved overvoltage robustness, higher noise-immune threshold, dV/dt suppression and ESD protection. Transistors are driven similarly to Si MOSFETs, eliminating the need for complex and inefficient circuits, instead using commercially available industry gate drivers. Devices feature a QG that is 10x lower than silicon parts and QOSS is 5x less, which reduces switching losses at high switching frequencies, reducing size and weight.

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