Fully-matched high-power GaN/SiC transistor delivers 50W at 5-6GHz

INTEGRA TECHNOLOGIES IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50 Ohms and supplies 50W of peak pulsed output power at 50V drain bias. Product covers the frequency range 5.2-5.9GHz with instantaneous response and provides 14dB of gain and 43% efficiency at 1 millisecond/15% pulse conditions. The 50W transistor is suitable for C-band pulsed radar system designs that require immediate full power and high gain.