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Fully-matched, 5-6 GHz RF power transistor delivers 25W of power


INTEGRA TECHNOLOGIES IGT5259CW25 fully-matched, gallium nitride on silicon carbide (GaN/SiC), RF power transistor that is ideal for C-band, continuous wave (CW) applications. Device is fully matched to 50-ohms, operates at the instantaneous frequency range 5.2 – 5.9GHz, and delivers a minimum of 25W of output power at 36V drain bias. Device provides 12dB of gain and 48% efficiency at CW conditions. (Negative gate voltage and bias sequencing are required when utilizing this transistor.)


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