eMRAM device isbBased on 28nm FD-SOI process

SAMSUNG ELECTRONICS 28FDS-based embedded magnetic random access memory (eMRAM) semiconductor product is based on the firm’s 28nm fully-depleted silicon-on-insulator (FD-SOI) process technology. Device provides resistance-based operation and allows strong scalability, while also possessing improved technical characteristics such as nonvolatility, random access, and strong endurance. Solution enhances power and speed advantages with lower cost. Since eMRAM does not require an erase cycle before writing data, its writing speed is approximately a thousand times faster than eFlash. Device uses lower voltages than eFlash, and does not consume electric power when in power-off mode, resulting in great power efficiency.