Embedded flash memory device brings thinner profile, faster read/write speeds
Stephen LawElectronics Semiconductors Flash memory semiconductor Storage Universal
KIOXIA AMERICA UFS next generation of 256 and 512 gigabyte (GB) Universal Flash Storage (UFS) Ver. 3.1 embedded flash memory devices are housed in 0.8 and 1.0mm-high packages. Devices improve performance by 30% for random read and 40% for random write – making them thinner and faster than their predecessors. Devices utilize firm’s most current, high-performance BiCS FLASH 3D flash memory and are targeted to a variety of mobile applications.