e-mode GAN FETs serve low, high-voltage applications

NEXPERIA Power GaN FETs in e-mode (enhancement mode) configuration for low (100/150V) and high (650V) voltage applications. Product portfolio includes five 650V rated e-mode GaN FETs (with RDS(on) values between 80mΩ and 190mΩ) in a choice of DFN 5×6 mm and DFN 8×8 mm packages. They improve power conversion efficiency in high-voltage, low-power (<650 V) datacom/telecom, consumer charging, solar and industrial applications. They can also be used to design brushless DC motors and micro server drives for precision with higher torque and more power.

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