Compact SolidGaN integrated half-bridge boosts performance
Stephen LawPower Supply / Management Semiconductors GaN half-bridge INNOSCIENCE Integrated power semi semiconductor SolidGaN
INNOSCIENCE TECHNOLOGY ISG3201 SolidGaN half-bridge integrated GaN devices are a complete half-bridge circuit including two 100V 3.2mΩ InnoGaN HEMTs and the required driver circuitry in an LGA package measuring 5×6.5×1.1mm. Device provides designers a choice between the flexibility of using a discrete solution, while the integrated approach is compact and simple to use during the power stage layout. Product comprises two 100V 3.2mΩ e-mode GaN HEMTs with driver, driving resistor, bootstrap and Vcc capacitors. Device has a 34A continuous current capability, zero reverse recovery charge and ultra-low on resistance. Thanks to the high level of integration, gate loop and power loop parasitics are kept below 1nH. As a result, voltage spikes on switching nodes are minimized. The Turn-On speed of the half-bridge GaN HEMTs can be adjusted using a single resistor.
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