Commercial Silicon Carbide Power MOSFET delivers 1200V blocking voltage
CREE CMF20120D SiC MOSFET provides blocking voltages up to 1200V with an on-state resistance (RDSon) of just 80m at 25C. Device’s RDSon remains below 100milli-ohms across its entire operating temperature range. Tests demonstrate the lowe gate drive energy (QG <100nC) across the recommended input voltage range. Conduction losses were minimized with forward drop (VF) of <2V at a current of 20A.