ASFETs for hot-swap increase SOA by 166%, slash pcb footprint
Stephen LawElectronics Semiconductors ASFETs MOSFET semiconductor
NEXPERIA PSMN4R2-80YSE (80 V, 4.2 mΩ) and PSMN4R8-100YSE (100 V, 4.8 mΩ) hot-swap ASFETs are packaged in the Power-SO8 compatible LFPAK56E. Device’s internal copper-clip construction of the package improves thermal and electrical performance whilst substantially reducing footprint size. Products are 5mm x 6mm x 1.1mm, offering reductions of 80% and 75% for pcb footprint and device height respectively, compared to the D2PAK of previous generations. Devices also feature a maximum junction temperature of 175 °C, meeting IPC9592 regulations for telecoms and industrial applications.