650V SiC Schottky diodes boost efficiency, reliability

VISHAY INTERTECHNOLOGY Gen 3 650V silicon carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design, while combining high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs. The next-generation devices consist of 4A to 40A devices in the TO-22OAC 2L and TO-247AD 3L through-hole and D²PAK 2L (TO-263AB 2L) surface-mount packages. Product’s MPS structure reduces their forward voltage drop by 0.3V compared to previous-generation solutions, while their forward voltage drop times capacitive charge — a key figure of merit (FOM) for power efficiency — is 17% lower.

click here for more info