650V MOSFET boosts reliability, performance
INFINEON CoolSiC 650V silicon carbide (SiC) MOSFETs address the growing demand for energy efficiency, power density, and robustness in a wide range of applications. Devices are rated from 27mΩ to 107mΩ. Products are available in classic TO-247 3-pin as well as TO-247 4-pin packages, which allows for even lower switching losses. Product family is based on firm’s state-of-the-art trench semiconductor technology. Maximizing the strong physical characteristics of SiC, this ensures that the devices provide improved reliability, best-in-class switching and conduction losses. Units feature high transconductance level (gain), threshold voltage (Vth) of 4 V and short-circuit robustness.