650V MOSFET boosts reliability, performance
Stephen Law
Electronics Semiconductors MOSFETs MOSFETs silicon carbide silicon carbideINFINEON CoolSiC 650V silicon carbide (SiC) MOSFETs address the growing demand for energy efficiency, power density, and robustness in a wide range of applications. Devices are rated from 27mΩ to 107mΩ. Products are available in classic TO-247 3-pin as well as TO-247 4-pin packages, which allows for even lower switching losses. Product family is based on firm’s state-of-the-art trench semiconductor technology. Maximizing the strong physical characteristics of SiC, this ensures that the devices provide improved reliability, best-in-class switching and conduction losses. Units feature high transconductance level (gain), threshold voltage (Vth) of 4 V and short-circuit robustness.
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