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650V fast body diode MOSFETs increase voltage headroom


VISHAY 650V EF Series (SiHx21N65EF, SiHx28N65EF, and SiHG33N65EF) fast body diode n-channel power MOSFETs provide additional voltage headroom for industrial, telecom, and renewable energy applications when desired. Built on E Series superjunction technology, devices provide a 10x lower reverse recovery charge (Qrr) than standard MOSFETs. This allows the devices to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress and increasing reliability in zero voltage switching (ZVS) / soft switching topologies such as phase-shifted bridges, LLC converters, and 3-level inverters. http://www.vishay.com

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