55W peak GaN discrete transistor housed in a compact package
Stephen LawElectronics Power Supply / Management discrete GaN transistor
NXP Airfast GaN A3G26D055N 55W peak GaN discrete transistor is housed in a compact DFN 7 x 6.5mm over-molded plastic package. Device has an unmatched output to fill multiple frequency bands and exceeds more than 50% efficiency and over 13dB of gain with operation at 48V. Device is versatile in that its applications range from 100-2800 MHz and can be used across various markets. These markets include cellular infrastructure, RF Energy and wideband communications. The sub-6 GHz device operates in the 2.6 GHz cellular band, at 39dBm and at 8W average power.