Electronic Products & Technology

30V P-Channel MOSFET lowers RDS(ON) to increase power density

February 13, 2020  Stephen Law

VISHAY INTERTECHNOLOGY Siliconix SiSS05DN 30V p-channel TrenchFET Gen IV power MOSFET provides industry-low on-resistance of 3.5mΩ at 10V in the 3.3mm by 3.3mm thermally enhanced PowerPAK 1212-8S package. Device delivers best in class on-resistance times gate charge — a critical figure of merit (FOM) for MOSFETs used in switching applications — of 172mΩ*nC. Purpose-built to increase power density, the space-saving component is 65 % smaller than devices with similar on-resistance in 6mm by 5mm packages. 

click here for more info


Print this page

Related Stories

Leave a Reply

Your email address will not be published. Required fields are marked *

*