25V N-Channel power MOSFET lowers on-resistance, boosts power density

VISHAY Siliconix SiRA20DP 25 V n-channel TrenchFET Gen IV power MOSFET provides industry low maximum on-resistance of 0.58mΩ at 10V. Delivering increased efficiency and power density for a wide range of applications, device provides the lowest gate charge and gate charge times on-resistance figure of merit (FOM) for devices with on-resistance below 0.6mΩ. Offered in the 6mm by 5mm PowerPAK SO-8 package, device is a rare two 25V MOSFETs in a market with maximum on-resistance below 0.6mΩ.