200 V N-Channel MOSFET delivers low RDS(ON)

VISHAY Siliconix SiSS94DN 200V n-channel MOSFET provides low typical on-resistance of 61mΩ at 10V in the 3.3mm by 3.3mm thermally enhanced PowerPAK 1212-8S package, in addition to improved on-resistance times gate charge — a critical figure of merit (FOM) for MOSFETs used in switching applications — of 854 mΩ*nC. Purpose-built to increase power density, the space-saving device is 65 % smaller than products with similar on-resistance in 6mm by 5mm packages. 

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