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SiC MOSFET boosts performance in power conversion designs


INFINEON CoolSiC silicon carbide (SiC) MOSFET technology allows product designs to achieve new levels of power density and performance, providing improved flexibility for increasing efficiency and frequency. Devices improve development of power conversion schemes to save space and weight, reduce cooling requirements, improve reliability and lower system costs. Devices have been optimized to combine reliability with performance, operating with ‘benchmark’ dynamic losses that are an order of magnitude lower than 1200V silicon (Si) IGBTs. Devices are fully compatible with the +15 V/-5 V voltages typically used to drive IGBTs. http://www.infineon.com/coolSiC

16JJD252_IC1

 


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