Diodes enhance insertion loss, return loss characteristics

NEXPERIA PESD5V0R1BxSF extremely low clamping and capacitance bidirectional Electrostatic Discharge (ESD) protection diodes are based on firm’s TrEOS technology with active silicon-controlled rectification. Devices ensure optimal signal integrity for USB4 (up to 2 x 20 Gbps) data lines on laptops and peripherals, smartphones and other portable electronic equipment.

PESD5V0R1BDSF is optimized for low clamping and delivers low insertion loss figures of ‑0.28 dB at 10GHz and similarly low return loss figures of ‑19dB at 10GHz. PESD5V0R1BCSF is optimized for RF performance with insertion loss data of -0.25dB and return loss data of -19.4dB at 10GHz each.

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