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December 11 - December 15, 2021
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https://www.ieee-iedm.org
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December 11 - December 15, 2021
2021 IEEE International Electron Devices Meeting to Unveil the Latest Advances in Semiconductors and Related Technologies
Will be an in-person event in San Francisco, CA from Dec. 11-15, with on-demand content available afterward
Selected Technical Highlights1
- A Stretchable Amplifier for Smart Textiles, from a Tsinghua University-led team
- 3D at the Device Level, from IBM and Samsung
- GaN Meets Moore’s Law, from Intel
- GaN at Up to 10 kV, from a Virginia Tech-led team
- Record FeRAM Performance for Embedded Memory, from Intel
- Record Quantum Efficiency for NIR/SWIR Sensors, from STMicroelectronics
- A Marriage of Photonics and Terahertz Electronics, from Osaka University
- Five Focus Sessions in areas of intense research interest (Device Technology for Quantum Computing; Stacking of Devices, Circuits, Chips; STCO for Memory-Centric Computing and 3D Integration; Topological Materials, Devices and Systems; Technologies for AR/VR and Intelligent Sensors)
https://www.ieee-iedm.org
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