InGaAs photodiode delivers 50µm active area

OSI LASER DIODE LAPD 3050 indium gallium arsenide (InGaAs) avalanche photodiode (APD) module is designed for light level detection and/or signal transmission applications. The 50µm active area device provides low dark current, low back reflection and high speed (2.5Ghz) in a miniature package. With spectral response from 1000nm to 1650nm at 25C, the typical operational wavelength is 1550nm. Device is housed in a hermetically sealed 3-pin coaxial package and coupled to a single-mode fiber pigtail. The overload-tolerant device offers a breakdown voltage from 50V (min.) to 70V (max.) and operating and storage temperatures range from -40C to +85C. http://www.laserdiode.com