High power 1500W transistor enables compact designs

NXP 1500W RF transistors enable the design of more compact systems with longer lifetimes and reduced service costs. Device provides extreme ruggedness with a VSWR of 65:1. Product delivers high breakdown voltage at 135V, with drain-source avalanche energy absorption capability 35% higher than its predecessor. Device is available in air-cavity ceramic and over-molded plastic packaging, enabling low thermals and enhanced reliability. http://www.nxp.com/products