Annular quadrant backscatter detectors operate at 350nm – 1100nm

Annular Quadrant Silicon Photodiodes operate between 350nm to 1100nm and are used for backscatter reflectivity measurements. The silicon (Si) quadrant detector provide an annular package design and includes a 200µm laser-cut hole on the chip and the header that enables a fiber to be coupled from the back of the detector. This ensures that the detector sensing area is always normal to the direction of the light, reducing the need for angular compensation during backscatter measurements. Available in TO-5 and TO-8 metal packages, the active area on each element is 1.6mm2 and 19.6mm2 respectively. http://osioptoelectronics.com/standard-products/new-products.aspx