January 13, 2013 - by EPT Magazine
50V GaN HEMT transistors reduce cellular network energy needs
CREE 50V GaN HEMT transistors reduce the energy required to power cellular networks. Operating at 100W or 200W output powers, devices are can be used for both the 1.8 to 2.2GHz and 2.5 to 2.7GHz frequency bands. Devices are internally matched for optimum performance, enabling wide instantaneous bandwidths.